Abstract
AbstractThe structural properties of GaN and Ga1–x Mnx N layers are reported. The GaN and Ga1–x Mnx N layers were obtained by the sublimation sandwich method (SSM). Electron microprobe measurements detected high Mn concentration of up to 4.0 at% in Ga1–x Mnx N materials. Raman investigations demonstrated that the prepared layers had a well‐ordered structure. The densities of dislocations in the template MOCVD layer, SSM GaN layers and SSM Ga1–x Mnx N layers were 3.9 × 108 cm–2, 1.4 × 108 cm–2 and 3.0 × 109 cm–2, respectively. The AFM studies demonstrated that the GaN RMS roughness increased with the increase in thickness. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
