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Abstract
AbstractGaSb/GaAs(111)A layers with embedded Mn(Ga)Sb clusters have been grown by molecular beam epitaxy method at the substrate temperature of 450 °C. The results of structural characterization of (Ga,Mn)Sb with Mn concentration up to 8% are presented. Almost all Mn atoms introduced into the GaSb layers form hexagonal Mn(Ga)Sb clusters. Large hexagonal clusters with various shape and dimensions were detected by scanning electron microscopy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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