Abstract
We report a detailed x-ray scattering study of GaAs grown on Si and Ge substrates by molecular beam epitaxy. We find that the Q dependence of the peak widths can be completely understood in terms of residual strains in the epitaxial film. This result places lower limits on the domain size and antiphase domain size (if they exist) of 6000 and 4000 Å, respectively. In addition, we find that the GaAs lattice is commensurate with that of the Ge substrate, but that the GaAs lattice is incommensurate with the Si substrate; however, in both cases the GaAs lattice has tetragonal symmetry. We show that the measured lattice parameters and thus the tetragonal distortion can be explained by differential thermal expansion for the Si substrate sample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
