Abstract
Structural properties (lattice parameters, misorientation, and crystal quality) of 1–5.5 μ m thick GaAs layers grown on exact (100) Si and 3° off-oriented (100) Si substrates have been measured by DCX (double crystal X-ray) diffractometry. The measured lattice constants normal (α⊥) and parallel (α∥) to the interface are 5.6473 Å and 5.6639-5.6745 Å, respectively; α⊥ does not d epend on the layer thickness, but α∥ depends on the layer thickness in the range 1–5.5 μ m. Except for the case of exact (100) Si substrate, the GaAs [100] direction is between the surface normal and the [100] Si substrate, and the magnitude of the relative tilt between the GaAs and Si [100] directions is about 0.05°.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
