Abstract
Ga 2 O 3 (Gd 2 O 3 )–GaAs heterostructures in situ fabricated using a multichamber ultrahigh vacuum (molecular beam epitaxy) system were studied by x-ray reflectivity measurement and high-resolution transmission electron microscopy. The oxide–GaAs interfaces were found to be very smooth with the roughness no more than 1 nm. Moreover, an interfacial roughness as small as one atomic layer of GaAs (0.33 nm) was observed using x-ray reflectivity.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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