Structural properties of CuInSe 2 films prepared by selenization of metallic precursors on MoN x film substrates

Abstract

The aim of this work was to study the effect of MoN x film substrates on the structural properties of CuInSe 2 films prepared by selenization of metallic Cu–In alloy precursors. MoN x films were prepared by reactive dc-magnetron sputtering. All the CuInSe 2 films exhibit single phase chalcopyrite structure with (1 1 2) preferred orientation, which can be explained by the reduction of lattice mismatch between CuInSe 2 and MoN x . The bulk composition of selenized CuInSe 2 films are near stoichiometric, but the surface composition analysis suggests Cu deficiency on surface area. Furthermore, ordered defect compound, CuIn 2Se 3.5 is found on the surface of CuInSe 2 films. The results will be helpful for fabricating Cd-free ZnO buffer layer CuInSe 2 and Cu(In 1− x Ga x )Se 2 based thin film solar cells.