Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Abstract

Boron-doped Ge1−xSnx alloys with atomic fractions of tin up to x = 0.08 were grown on n-Ge(001) substrates using solid-source molecular beam epitaxy, in order to study their structural properties. The total boron concentration in the alloys was ~ 1018 cm−3 as measured by secondary-ion mass spectroscopy, which also indicated low amounts of impurities such as carbon and oxygen. More than 90% of the Sn atoms occupied substitutional lattice sites in the alloy as determined by Rutherford backscattering spectrometry. High-resolution x-ray diffraction showed that the boron-doped Ge1−xSnx alloys were single crystals that were completely strained with low defect densities and coherent interfaces for thickness up to 90 nm, and for Sn composition of 8%. The boron-doped Ge1−xSnx/n-Ge formed p–n junctions with conventional rectifying characteristics, indicating that the boron produced electrically active acceptor states.