Abstract
Carbon doped aluminum oxide co-doped with magnesium (Al2O3:C:Mg) thin films were deposited using radio frequency magnetron sputtering method on Si (100) substrates. The deposition chamber temperature was manipulated to allow control over the crystalline phase. The crystalline phase of deposited thin films were determined by x-ray diffraction (XRD) technique. Slight change in crystallite size was observed with respect to the increasing deposition chamber temperature. Fourier transform infrared (FTIR) analyses indicated a negligible interfacial SiO2 growth during deposition. Transmission spectra of FTIR showed the bond and functional group of deposited thin films.
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