Abstract
ABSTRACTIn this work we mainly report on the analyses of polycrystalline silicon carbide films grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) on Si (100) and Si (111) substrates. Structural properties of the films have been analyzed by X-ray diffractometry, transmission electron microscopy and micro-Raman spectroscopy. Samples deposited with optimized deposition conditions, show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400 Å and an orientation close to that of the Si substrates.
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