Abstract
This paper describes the structural properties and electrical characteristics of thin Dy2O3 dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy2O3 dielectrics annealed at 700°C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance–voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700°C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy2O3 structure and the reduction of the interfacial SiO2 layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
