Abstract
GaAs y P 1− y layers have been grown by MBE on VPE GaAs 0.63P 0.37 substrates for the first time. Substrate preparation has been investigated and related to defects found in subsequently grown layers. A detailed structural study which revealed the importance of system calibration to obtain close compositional control has been carried out. The variation of composition with substrate temperature has been measured and is discussed in terms of a kinetic model of the incorporation of As and P as a function of temperature.
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