Abstract

Electrical and optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) can be tuned by exploiting their structural phase transitions. Here semiconducting (2H) to metallic (1T) phase transition is investigated in a strained ${\mathrm{MoWSe}}_{2}$ monolayer using molecular dynamics (MD) simulations. Novel intermediate structures called $\ensuremath{\alpha}$ and $\ensuremath{\beta}$ are found between the 2H and 1T phases. These intermediate structures are similar to those observed in a 2D $\mathrm{Mo}{\mathrm{S}}_{2}$ by scanning transmission electron microscopy. A deep generative model, namely the variational autoencoder (VAE) trained by MD data, is used to generate novel heterostructures with $\ensuremath{\alpha}$ and $\ensuremath{\beta}$ interfaces. Quantum simulations based on density functional theory show that these heterostructures are stable and suitable for novel nanoelectronics applications.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.