Abstract
Structural-phase transformations in films at the interface of the heterosystem "glass - Ag-Pd clusters" – Sn-Pb have been investigated. The relationship between these transformations and the initial system material component dispersion is established at the same film element temperature operating mode. It is shown that structural-phase transformations in contact elements of hybrid integrated circuits microelectronic devices, sensors and solar cells, etc. made of functional materials based on the specified heterosystem can lead to degradation processes and, as a consequence, to a decrease in the electronic product reliability.
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