Structural parameters affecting the performance of non-volatile memory based on organic field-effect transistors

Abstract

To obtain better memory performance, we have varied different structural parameters such as thickness of the gold electrodes dAu and thickness of the electret de for organic non-volatile memory (ONVM) devices based on pentacene field-effect transistors. It was found that the memory devices gained larger memory windows by increasing dAu. This effect is attributed to the improved electron injection at the Au/pentacene contact. On the other hand, decreasing de facilitated the transport of the injected electrons, leading to a highly efficient programming. However, both strategies in excessive cases would unfortunately suffer from some limitations, which should be considered for practical applications. Additionally, with help of the results, we achieved an overall understanding about the operating mechanism of this memory type in aspects of charge injection and charge trapping.