Abstract
AbstractParameters for the structural short (SRO) and medium range order (MRO) of hydrogenated amorphous silicon (a‐Si:H) films on the edge of the microcrystalline silicon (µc‐Si:H) phase transition were studied with Raman spectroscopy. The observed samples were deposited using radio frequency plasma enhanced chemical vapor deposition. The studied films were grown with various constant and non‐constant silane concentrations (SCs). A substrate dependent correlation of SC to the intensity ratio (IMRO) of the transversal acoustical (TA) and the transversal optical (TO) phonon bands was found. A strong correlation between width and position of the (TO) phonon band was observed. These two easily accessible parameters show an increase of SRO when IMRO decreases.
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