Abstract
The exceptional stability of metal oxide heterojunctions makes them worthy of the future. Here we report V2O5/NiO heterojunction device fabricated utilizing both physical and chemical deposition techniques. Orthorhombic V2O5 thin films were grown by thermal evaporation technique using the V2O5 nanostructures synthesized via reverse micelle method. Nickel oxide (NiO) thin films were deposited using the solution-processed spin coating technique. The structural, optical and morphological properties of the V2O5 and NiO thin films were studied in detail. Highly transparent V2O5/NiO heterojunction was fabricated on FTO coated glass substrate with a device geometry of FTO/NiO/V2O5/Ag. The electrical properties were studied and the J-V curve shows a rectifying nature with a rectification ratio of 12 at a bias voltage of 0.7 V and a knee voltage of 0.58 V. The variation of the ideality factor is studied in different linear regions of the ln (J)- V curve. From the C-V characteristics of the device, a built-in potential of 0.54 V was obtained.
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