Abstract
(2¯01) oriented Pr-doped β-Ga2O3 (Ga2O3:Pr) thin films have been grown on (000l) α-Al2O3 substrates using radio frequency magnetron sputtering method. The influences of the dopant contents on the structural and optical properties of the Ga2O3:Pr thin films have been systematically studied. With the increase of Pr concentration, the c-axis lattice parameter of β-Ga2O3 are elongated, with the energy band gap shrinks. The Ga2O3:Pr films show a broad-band blue (∼490 nm) and a pronounced red (∼615 nm) photoluminescence under 255 nm light illumination. The obtained photoluminescence results are related to the energy transfer of cross relaxation process within the 4f2 configuration of the Pr3+. This work may provide a prominent candidate for further developing advanced composite materials incorporated with luminescent ions.
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