Abstract
Present study focuses on the structural, morphological, optical and electrical transport properties of Sn substituted In2O3 (In2-x SnxO3; 0.0 ≤ x ≤ 0.25) synthesized by solid state reaction method. X-ray diffraction patterns and selected area electron diffraction from high resolution transmission electron microscopy substantiated the pure cubic bixbyite structure with high crystallinity. Raman analysis confirmed the cubic like phonon modes in each sample and their noticeable phase was revealed by the presence of tin doping. The band gap widening of all nanocrystalline samples were well explained by Burstein-Moss model, due to the filling of the strongly dispersing conduction band by doped electrons and the decrease in oxygen vacancies were confirmed by deconvoluted emission spectra. Hall measurements showed the n-type conductivity with low electrical resistivity (1.3011×10−4Ω-cm) along with high carrier concentration (7.523×1020cm−3), mobility (63.85 cm2/V-s) and electron mean free path (11.183 nm) for x = 0.1, optimizing it as a suitable candidate for optoelectronic applications.
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