Abstract
A novel F and Nb co-doped SnO2 thin film with a rutile TiO2:Sn buffer layer (r-TTO/NFTO) was obtained using an aerosol-assisted chemical vapor deposition, and its micro-nano interface structure, electrical and optical properties were studied in detail. Due to the little lattice mismatch between the interfaces of NFTO and r-TTO layers as well as the synergistic enhancement effect of F and Nb co-doping, the tandem film shows an improved crystallinity with minimum residual stress and fewer planar defects. The heterogeneous structure formed between r-TTO and NFTO is conducive to the transfer of electrons in TiO2 to NFTO, increasing the carrier concentration of NFTO film. Compared with FTO film, both of the carrier concentration and Hall mobility were obviously improved, the sheet resistance (5 Ω/□) and resistivity (2.82 × 10−4 Ω cm) were reduced by 40% and 37%, respectively. Particularly, an extremely low emissivity of 0.08 was obtained, which is the lowest value for hard coatings to our knowledge.
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