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Abstract
The structural, electrical, and optical properties of e-beam and sputter-deposited Indium-Tin-Oxide (ITO) films on sapphire and p-GaN wafers, as well as the post-deposition annealing effect for light-emitting-diode applications, were analyzed and compared. The specific contact resistance of the sputtered ITO film on a p-GaN wafer was found to be slightly higher than that of the e-beam deposited ITO films. However, in general, the electrical, structural and optical properties of the sputtered ITO films that were annealed at comparably lower temperature are better than those of the e-beam deposited ITO films, which is the consequence of a larger average grain size. The sputtered ITO film that was annealed at 500°C demonstrated a resistivity of as low as 3.6 × 10−4 Ω·cm, along with a high transmittance of ∼98% at 450 nm.
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