Abstract

In this paper, Ag2ZnSnS4 (AZTS) thin films are prepared by depositing them on glass substrates at a temperature of (400 ºC) by chemical spray pyrolysis method, using 0.02 M of silver nitrate AgNO3, 0.01 M of zinc chloride ZnCl2, 0.01 M of tin chloride SnCl2.2H2O, and different concentrations of thiourea (SC(NH2)2) as source precursors. The structural, elemental analysis, optical, and electrical properties were investigated by XRD diffraction, Raman Spectroscopy, FESEM, UV-Vis. spectroscopy, and Hall effect technique. The results of XRD diffraction show that all films have a tetragonal stannite structure and pirquitasite type. The XRD diffraction results were confirmed by using the Raman spectrophotometer, where the results showed the emergence of the main peak with the highest intensity of the AZTS compound at the two sites (347, 348 cm-1 ). The FESEM results demonstrated the presence of micro particles with spherical shapes. The elemental analysis (weight and atomic percentages) of all samples is investigated using EDS technique. The optical energy band gap was proven to have a value ranging between (2- 2.08) eV with a high absorption coefficient (α ≥104 cm-1 ). On the other hand, electrical tests through the Hall effect of AZTS thin films show that they have an electrical conductivity of N-Type.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call