Abstract
The present study investigates structural optical and electrical properties of Indium Selenide thin films under nitrogen atmosphere and substrate heat treatment. Thermal evaporation technique was used to prepare indium selenide films. The X-ray diffraction reveals enhancement in crystallinity due to the nitrogen atmosphere during deposition. The calculated average crystalline size is increased due to nitrogen with substrate heated sample. The SEM images show the small grain for substrate heat treated samples and rod like shape for nitrogen with substrate heated samples. The conductivity was improved for nitrogen with substrate heated samples. All the samples show n-type conductivity. The Raman shift was observed at 468.54cm−1 for all the samples and confirms the crystallinity improvement.
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