Abstract
In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.
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