Abstract
The sol gel based spin coating technique was used to deposit the Sn1−xMnxO2 thin films on glass substrates using acetylacetone as sol gel precursor solvent. The samples were characterized by using X-ray diffraction (XRD), optical absorption spectroscopy, emission spectroscopy and Hall measurements. XRD patterns revealed the polycrystalline films with tetragonal rutile structure. The optical transparency in visible spectrum decreases with Mn content in SnO2 films. Optical gap is also found to decrease from 4.12 to 4.05 eV till x = 0.01 and thereafter an increase to 4.12 eV for x = 0.05. A strong emission peak at 385 nm for pure SnO2 films and its intensity is found to increase with Mn content. The maximum mobility (74.7 cm2/V-s) have been found to overshadow the decreased value of carrier mobility (6.12 × 1019 cm−3) to give minimum resistivity (8.4 × 10−3 Ω-cm) for x = 0.03, which may be very useful for futuristic optoelectronics.
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