Abstract
The transparent conducting Ga-Mg co-doped ZnO films were prepared on glass substrates by radio-frequency (rf) magnetron sputtering. The effect of growth temperature on structural, morphological and optoelectronic properties of the films was investigated by XRD, XPS, SEM, UV-visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (0 0 2) oriented. The growth temperature significantly affects the structure and optoelectronic properties of the films. The film deposited at the growth temperature of 270 °C has the largest grain size of 52.38 nm, the minimum tensile stress of 0.037GPa, the highest average visible transmittance of 89.39%, the lowest resistivity of 1.52 × 10−3 Ω⋅cm and the maximum figure of merit of 5.87 × 103 Ω-1⋅cm-1. Furthermore, the optical bandgaps were determined by extrapolation method and observed to be in the range of 3.36–3.59 eV.
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