Abstract
The results of complex analysis of the parameters of the GaAs/AlGaAs semiconductor superlattice with a complex unit cell using mathematical modeling and experimental methods of transmission electron microscopy, energy-dispersive analysis, and spectroscopy of photoluminescence and photocurrent are presented. Suppression of the intraband static negative differential conductivity under strong interaction conditions between minibands and the inharmonic electron-dispersion law is shown.
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