Abstract
Atomic structure and crystallography of Mn silicide islands formed on an Si(1 1 1) surface was investigated. Mn with 8–10 MLs was deposited on an Si(1 1 1) 7×7 surface at room temperature by means of an ultrahigh vacuum molecular beam epitaxy, and then transferred to an ultrahigh vacuum transmission electron microscope (UHV-TEM) without exposure to air. Annealing at 400°C caused the round shaped silicide islands composed of MnSi with a size of several tens of nanometers to grow epitaxially. From transmission electron microscopy analysis, it was found that the crystallography of the islands matches with that of the Si(1 1 1) substrate with the relation (1 1 1) Si∥(1 1 1) MnSi and [ 1 ̄ 0 1] Si ∥ [ 1 ̄ 2 1 ̄ ] MnSi , but their interface was incommensurate.
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