Abstract
AbstractThe results of an experimental study of a‐Si: H films are presented: dark and photoconductivity hydrogen concentration and SiH2/SiH ratio, optical gap, and Raman frequency. The deposition temperature is shown to be the main factor of the transformation of the density of localized states and corresponding shifts of the Fermi level. Theoretical calculations are made of the model of SiHSi bonds in the cluster approximation. The results concerning the Fermi level shifts are interpreted on the basis of this model.
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