Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

Abstract

In this study, the structural, morphological, optical, as well as electrical properties of the titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was examined. TZO thin films were deposited on both corning glass (CG) and n–type Si substrates. It was determined that the TZO thin film deposited on CG has crystallinity, good surface homogeneity, low surface roughness as well as suitable band gap value from X–Ray diffraction (XRD), atomic force microscopy (AFM) as well as UV–Vis analysis. In addition, TZO thin film deposited on the n–Si substrate was used to determine the electrical properties. The current–voltage (I–V) measurements of the Au/TZO/n–Si structure was done at 80 K and 300 K. Capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements of the Au/TZO/n–Si structure was examined for 0.3, 0.5 and 1 MHz.