Abstract
Cadmium Zinc Telluride (CdZnTe) is a ternary Ⅱ- Ⅵundeviating band gap semiconductor with cubic Zinc blende formation and it is a propitious material for ambient temperature xray as well as gamma ray sensor detectors. Cadmium Zinc Telluride (CdZnTe) thin layer coating were developed on nickel substrate by chemical bath deposition in non-aqueous approach. The as grown films were inspected by X-ray diffraction (XRD), Field emission scanning electron microscope (FESEM), Scanning electron microscope, Fourier transform infrared spectroscopy (FTIR), PL spectra, UV spectra, Raman spectroscopy and FourProbe analysis. Studies tell that as grown films are poly-crystalline in nature along with cubic zinc blende formation. The structural properties like crystallite size, lattice constant, micro strain as well as dislocation density were evaluated. FESEM and SEM analysis reveals that the as developed films are smooth and equal sized uniform spherical grains distributed in single state as well as in cluster form. The average size of grain film is observed to be 12.33 nm. Optical study reveals the broad transmittance escorted by the band gap energy of 2.2eV. Electrical study reveals that resistivity of as grown film is 5.1×105 Ω-cm at room temperature.
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