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Abstract
In this work, zinc oxide (ZnO) thin films were synthesized by thermal oxidation of zinc selenide films in oxygen atmosphere without introducing any catalysts or additives. According to the X-ray diffraction and morphology analysis, the ZnO films were hexagonal wurtzite structure, indicating the high crystalline quality. Strong emission peak at around 370nm (ultraviolet) and weak emission peak at 525nm (green) were observed in the photoluminescence spectra. The dependence of photoluminescence intensity on annealing conditions was investigated in the experiment. With the increase of annealing temperature and time, the photoluminescence intensity reached a peak at 450°C for 45min in oxygen, which was considered to be the optimal condition.
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