Abstract
The iron doped tungsten-oxide (Fe and WO3) thin film with different morphology and crystalline structures were obtained for different substrate temperatures at the oxygen pressure of 14.66 Pa. The Fe-doped WO3 films were deposited by pulsed laser deposition (PLD). The influence of the substrate temperature on the surface and on the crystalline phases of the films was studied. The XRD (X-ray diffraction) analysis indicates the changing in the crystalline phases from γ-monoclinic to a mixture of γ-monoclinic and hexagonal phases dependent on the temperature of annealing and as-grown films. Related to the as-grown and annealing films conditions, the SEM (scanning electron microscopy) shows a change in the image surface from nanoneedles, to nanoporous, and further to long nanowires and broad nanobands. Energy-dispersive X-ray spectroscopy (EDX) shows the elemental composition of the Fe-doped WO3 film as-grown and after annealing treatment. Raman spectroscopy presented the main vibration mode of the Fe-doped WO3 thin film. The optical energy bandgap of the films is decreasing as the substrate temperature increases.
Highlights
At present, since industrialization continues to advance, air pollution has become a topic of current interest for health, research, and detection of polluting gases
Since the thin film is a sensing material, which is the main part of the sensor, the aim of this paper is to study the structural, morphological, and optical characterization of the Fe-doped WO3 film
The WO3 and Fe-doped WO3 thin films were deposited on the silicon substrates by pulsed laser deposition (PLD)
Summary
Since industrialization continues to advance, air pollution has become a topic of current interest for health, research, and detection of polluting gases. Detection of toxic gases from air is mainly done by gas sensors. Metal-oxide semiconductor thin films are important material because of their potential applications in photo-catalysis [2], solar cells, and gas sensors. Nanostructured metal oxide semiconductors thin films such as WO3 , SnO2 , ZnO and In2 O3 are intensively studied, being an important subject in the research field of resistivity type gas sensors, since the interaction between the analysts and sensing materials thin film of the surface lead to significant variation in the electrical resistivity. The tungsten trioxide (WO3 ) is an n-type semiconductor with a wide band gap of 2.5 to 3 eV and is commonly used as sensing material because it reacts to a large number of gas molecules and has a strong variation in resistance [3].
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