Abstract
Semiconductor electronic and optical devices are used in space, nuclear reactor, particle accelerator for data acquisition, processing, and power control systems. Gamma ray is inherent in these types of environment. Thus, the semiconductor materials used in the installed device interacts with gamma ray altering properties of semiconductors significantly. Therefore, the effect of gamma ray needs to be explored before applying a material in a radiation-exposed environment. In this work, CuO thin film, a p-type potential compound semiconductor for optoelectronics and photonics device, was fabricated by Doctor-blade method on a glass substrate and irradiated with Cobalt-60 gamma radiation source. For the first time, the effects of absorbed dose on morphological, structural, and optical properties on CuO thin film were investigated by SEM, XRD, and UV-vis-NIR spectroscopic analyses. Significant variations in optical bandgap, transmittance, absorbance, crystallite size, lattice strain, and dislocation density were observed.
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