Abstract
Semiconducting CdIn2Se4 thin films have been deposited on to the conducting glass substrates using pulsed electrodeposition technique. X-ray diffraction (XRD) shows the films are polycrystalline in nature having cubic crystal structure. Energy dispersive analysis (EDAX) spectrum of the surface composition confirms the nearly stoichiometric CdIn2S4 nature of the film. Atomic force microscope (AFM) shows that the deposited films are well adherent and grains are uniformly distributed over the surface of substrate. The surface roughness and grain size increased from 0.2nm and 12nm to 0.7nm and 20nm respectively with increase of duty cycle. The films are highly transparent in the visible region with an average transmittance reaching up to 80%, which indicates the better crystalline nature with less defects. The CdIn2Se4 thin films show band gap energies of the films decreased from 3.12eV to 3.77eV.
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