Abstract
Structural, Morphological and Acetone Sensing Properties of Ga doped ZnO Thin Films by Spray Pyrolysis
Highlights
Ga-doped ZnO (GZO) has drawn attentions recently because it has some advantages over AZO
Concerning the use of Ga as the dopant to enhance electrical properties, it has been reported that resistivity of GZO films decreased with increasing film thickness where as the transmittance of films decreased as the film thickness increased [4]
As in the case of the AZO films, it would be possible to improve the electrical properties of GZO films by post-annealing treatment in hydrogen atmosphere [5,6,7,8]
Summary
Ga-doped ZnO (GZO) has drawn attentions recently because it has some advantages over AZO. Whereas AZO and GZO TCOs have comparable electrical properties [1], Ga dopant is less reactive with oxygen compared with Al dopant meaning that it can function as better dopant within ZnO [2]. As in the case of the AZO films, it would be possible to improve the electrical properties of GZO films by post-annealing treatment in hydrogen atmosphere [5,6,7,8]. In this investigation, the ZnO:Ga thin films were deposited on preheated amorphous glass substrates using P.
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