Abstract

The present work studies the effect of high-power (high-voltage) nanosecond pulses on the phase composition and chemical (quantum) state of atoms of surface layers of sulfide minerals with different semiconductor properties (galenite, chalcopyrite, pyrrhotite, pentlandite, molybdenite, and sphalerite) by means XPES and DRIFTS analysis , and analytical electron microscopy (SEM/EDX). Common patterns and main characteristic features of the structural phase transformations of sulfide surfaces under the pulsed energetic effect demonstrate: (i) formation and growth of a surface layer by the nonstoichiometric sulfur-enriched sulfide phase and metal (for example, Zn and Mo) oxides and hydroxides; (ii) the staged character of the transformation of sulfur atoms in the composition of galenite, pyrrhotite, pentlandite and sphalerite surface layers and (iii) the stability of the chemical state of sulfur in the molybdenite composition and lead atoms in the galenite composition. The increase of the electrode potential of sulfide minerals under pulsed effect provides favorable conditions for the adsorption of anion collector and, as a consequence, leads to the increase of galena, chalcopyrite and sphalerite floatability.

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