Abstract
The radiation-induced changes of the molecular structure and properties of chalcogenide glassy semiconductors are analysed. The effect of γ-radiation on the mechanical properties (Young's module, internal friction) of glassy arsenic chalcogenides is investigated at various temperatures and radiation doses. At low temperatures the changes of the molecular structure and the corresponding changes of mechanical properties of the chalcogenide glasses under the influence of γ-radiation grow with the decrease of the structural network rigidity. On the other hand at higher temperatures the opposite dependence of the properties is found. [Russian Text Ignored].
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