Abstract
AbstractIn this article, the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride‐hexafluoropropylene (PVDF‐HFP) thin films in Ag/Cu/PVDF‐HFP/Cu capacitor structures have been investigated. The bottom interfaces glass or Cu/glass influence upon the PVDF‐HFP thin‐film crystal structure and microstructure have been evaluated using grazing incidence X‐ray diffractometer and atomic force microscopy. Quasi‐static current–voltage loops, the polarization versus electric field loops measured at varied applied frequencies (100 mHz–1 Hz) and electric field amplitudes (2.5–27.5 MV/m) are utilized to comprehend the ferroelectric characteristics of PVDF‐HFP thin films. Furthermore, the observed linear dependency between coercive field and frequency is linked to the homogenous domain growth model proposed by Kolmogorov‐Avrami‐Ishibashi.
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