Abstract
Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, magnetotransport properties of the junctions on the thickness of the FePt layers was investigated. A full epitaxial structure was observed when the thickness of the L10-ordered FePt film was 4 nm. The tunnel magnetoresistance (TMR) ratio was measured to be 6% at room temperature, and magnetization switching was clearly observed in the thin FePt layer.
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