Abstract
We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ∼50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T′) phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T′ phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T′-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.
Highlights
Bismuth ferrite (BiFeO3–BFO), by virtue of its ferroelectric and antiferromagnetic order at room temperature, is a well-studied multiferroic.[1]
Increasing the film thickness above 20-30 nm triggers strain relaxation, and, instead of the usual formation of misfit dislocations, a mixture of both the T phase and a more stable bulkderived rhombohedral-like (R ) phase[9] is formed. The presence of this “strain-induced morphotropic phase boundary” (MPB),[11] along with the added versatility that the T and R phase fractions can be modulated with an electric field,[11,12] has generated increased interest in BFO as a potential leadfree piezoelectric material
The high film quality allows us to demonstrate almost perfect interconversion between the T and R polymorphs using a local applied electric field provided by a conductive atomic force microscopy (AFM) tip
Summary
Bismuth ferrite (BiFeO3–BFO), by virtue of its ferroelectric and antiferromagnetic order at room temperature, is a well-studied multiferroic.[1]. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films
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