Abstract
The paper contributes the preparation and characterization of Sm0.43Nd0.10Sr0.47MnO3 thin film. The thin film deposited on the single crystal of LaAlO3 (001) substrates by DC-magnetron sputtering at 1053 K at a pressure of 200 m Torr. The deposited thin film was found to have insulating behavior when annealed in oxygen atmosphere at 1223 K for 24 h. The X-ray diffraction (XRD) study shows that, both 30 nm and 60 nm thin films reveal compressive strain. The magnetic measurement (M-H) shows that the paramagnetic to ferromagnetic transition temperature of 60 nm film is 145 K. At higher film thickness (~ 60 nm) a sharp insulator-to-metal transition is observed at 142 K (TIM = 142 K). 60 nm film show a huge temperature co-efficient of resistance (TCR) and low field magneto resistance/an-isotropic magneto resistance (MR/AMR) is observed. The difference in the magneto transport properties of the two films have been explained in terms of presence of the magnetically and structurally disordered layer at the film-substrate interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
