Abstract
We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle of misorientation of the wires with respect to the (110) direction are extracted. The reciprocal-space maps reveal that, after the fabrication process the lattice constant along the growth direction increases slightly for the wires and even more so for the dots.
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