Abstract
Bi Fe O 3 ∕ Pb ( Zr 0.5 , Ti 0.5 ) O 3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12μC∕cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tanδ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
