Abstract
AbstractIn this work, we investigated the influence of Al doping on the structure of the (ZnO)5In2O3 homologous phase and the thermoelectric characteristics of (ZnO)5(In1−xAlx)2O3 ceramics for x=0, 0.01, 0.03, 0.05, 0.1, and 0.2, prepared using a classic ceramic procedure and sintering at 1500°C for 2 hours. The Al substituted for In on both the primary sites in the Zn5(In1−xAlx)2O8 homologous phase, the octahedral sites in the basal‐plane inversion boundaries and the trigonal bi‐pyramidal sites in the zig‐zag inversion boundaries, which resulted in a uniformly increased shrinkage of the unit cell with the additions of Al. The a and c parameters were reduced for x=0.2 by a maximum 0.8%. All the samples had similar microstructures, so the differences in the TE characteristics mainly resulted from the effects of the substitution of Al for In, decreasing the charge‐carrier concentration and affecting their mobility. Slightly improved TE characteristics were only observed for Al additions with x=0.01‐0.05, while larger additions of Al only resulted in a reduced electrical conductivity and decreased ZT values in comparison to the un‐doped composition.
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