Abstract
GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristics of Si-doped GaAs under different gamma irradiation doses (0, 0.1, 1 and 10 KGy) are investigated. Surface morphology studies show roughen of the surface with irradiation. Appearance of transverse-optical (TO) phonon mode and blueshift of TO peak reflect the presence of internal strain with irradiation. The average strain has been measured to be 0.009 by Raman spectroscopy, indicating that the irradiated zone still has a good crystallinity even at a dose of 10 KGy. Photoluminescence intensity is increased by about 60% under 10 KGy gamma irradiation due to the strain suppression of nonradiative recombination centers. Furthermore, the current of Si-doped GaAs is reduced at 3V bias with the increasing gamma dose. This study demonstrates that the Si-doped GaAs has good radiation resistance under gamma irradiation, and appropriate level of gamma irradiation can be used to enhance the luminescence property of Si-doped GaAs.
Highlights
Gallium Arsenium (GaAs), as a direct band gap semiconductor material, shows high application value in optoelectronic devices and nuclear microwave devices due to its suitable band gap, high electron/hole mobility, and photoelectric conversion efficiency [1,2,3,4,5]
Over the past few decades, much efforts were devoted to investigating the structural features and photoelectric behavior of GaAs under different radiation environments
Khanna et al found that the photoluminescence (PL) intensity of GaAs increases under the irradiation of 1010 e/cm2 electrons and 3 × 1013 n/cm2 neutrons, which is due to the fact that low flux irradiation reduces the hole trap concentration [17].These studies demonstrate that radiation environments have significant impacts on the photoelectric properties of GaAs
Summary
Gallium Arsenium (GaAs), as a direct band gap semiconductor material, shows high application value in optoelectronic devices and nuclear microwave devices due to its suitable band gap, high electron/hole mobility, and photoelectric conversion efficiency [1,2,3,4,5]. In order to improve the survivability and reliability of devices under various radiation environments, it is necessary to study the photoelectric behavior of electronic devices based on GaAs under irradiation conditions. Khanna et al found that the photoluminescence (PL) intensity of GaAs increases under the irradiation of 1010 e/cm electrons and 3 × 1013 n/cm neutrons, which is due to the fact that low flux irradiation reduces the hole trap concentration [17].These studies demonstrate that radiation environments have significant impacts on the photoelectric properties of GaAs. Theoretically, Nordlund et al studied defect production in GaAs under low-energy self-recoils and 6 MeV He ion irradiation by using molecular dynamics simulations. It is interesting to find that the Si-doped GaAs is resistant to high-dose gamma radiation, and its luminescence property can be improved by the radiation
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