Structural features and conductivity of silicon films: Simulation and experiment

Abstract

Structural and photoelectric properties of low-temperature silicon microcrystalline layers are studied. The layers are obtained by a new method of electron-beam plasma produced by the electron beam interaction with the supersonic flow of initial gas mixtures. Based on the experiments and Monte Carlo calculations it is found that the dependence of the μc-Si:H layer conductivity on the degree of crystallinity of the material is described within percolation theory.