Abstract
The present study probes into the transition from anatase to rutile phase of TiO2 in 100 nm thick nanocrystalline thin films under thermal annealing and swift heavy ion (SHI) irradiation. The films were prepared using sol-gel and spin coating techniques on silicon (100) substrates. The as-deposited films are found to be amorphous by glancing angle x-ray diffraction and Raman spectroscopy. Though thermal annealing is known to cause transformation from anatase to rutile phase of TiO2 in a temperature interval of 700–900 °C, in nanoparticle thin films, we found that a sizable volume fraction of anatase still remains even after annealing at 1000 °C. Irradiations by 200 MeV Ag ions on the other hand suppressed the anatase phase and almost phase pure rutile TiO2 could be obtained at a fluence of 3×1012 ions cm−2. A mechanism based on the competing effect of grain growth and conversion of anatase to rutile at the grain boundary of the anatase on annealing and conversion of anatase to rutile in the grains of the anatase due to SHI induced thermal spike is proposed to explain the observed result.
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