Abstract
The changes in the amplitude and orientation of the dipole at the surface layer of phosphorous (P) implanted vicinal Si(111) show the evolution of its restructuring. The different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface. The dipolar configuration of implanted vicinal Si(111) would be variant for the different annealing conditions at which silicon recrystallization and P activation occur. Reflective second harmonic generation (RSHG) is a sensitive technique for studying the symmetrical dipole structure on the surface. We offer a model to distinguish dipolar configurations of the top surface from the one of the implanted bulk Si(111) and explain their relative phase variation in the results of RSHG experiment.
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