Abstract
Ge2Sb2Te5 films were locally crystallized by a tightly focused laser beam and the structural evolution was studied by Raman scatting. The marks recorded by a broad range of laser power were studied by optical microscope. Raman spectra of films with irradiation power of 0.1mW and 1mW were consistent with those of films annealed at 140°C and 400°C, respectively. It reveals that both the cubic and hexagonal crystalline phases have been achieved under the irradiation of 488nm laser in amorphous Ge2Sb2Te5 films. Specifically, the appearance of a new band of ∼141cm−1 in films with irradiation power larger than 1.25mW confirms that the over-irradiation causes the segregation of Te crystalline phase in films.
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