Abstract
Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.
Highlights
Extensive works on nanocrystalline Si[1,2] and Ge[3,4] film materials have been conducted for more than two decades
With raising Ta up to 900 ◦C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation
Plasma enhanced chemical vapor deposition (PECVD) technology, where high density plasmas serves as an effective source to provide enough ions and radicals, has been most widely used in fabricating of semiconductor films
Summary
Extensive works on nanocrystalline Si (nc-Si)[1,2] and Ge (nc-Ge)[3,4] film materials have been conducted for more than two decades. Increasing attentions have been given to nc-Si1−xGex film,[5,6,7] which shows numerous potential applications, such as transistors,[8,9] photovoltaic[10] and infrared detection,[11] due to its tunable optoelectronic properties. It is most significant to understand and control the microstructures of nc-Si1−xGex films. Kortshagen’s work suggested that the residence time (the time during which the source gas travel through the plasma region) is one of the most important factors which affect the size and property of the fabricated nanocrystals.[14] Lots of works on the formations of nc-Si1−xGex alloy suggested that it usually consists of hybrid crystalline structures, and more complex than that of nc-Si.[15,16,17,18]. Characterizations, such as Raman, scanning electron microscope (SEM), x-ray diffraction (XRD), and energy disperse spectroscopy (EDS), we reveal the structural evolution of the Ge-rich Si1−xGex films with a hybrid amorphous/microcrystalline structure in the annealing treatment process
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